Abstract
Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Haas oscillations in diagonal magnetoresistance of gated epitaxial graphene on SiC (0001).
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2009
- DOI:
- 10.1063/1.3254329
- arXiv:
- arXiv:0908.3822
- Bibcode:
- 2009ApPhL..95q2105S
- Keywords:
-
- aluminium;
- atomic layer epitaxial growth;
- graphene;
- high-k dielectric thin films;
- high-temperature effects;
- insulating thin films;
- oxidation;
- quantum Hall effect;
- semiconductor-insulator boundaries;
- Shubnikov-de Haas effect;
- silicon compounds;
- sublimation;
- wide band gap semiconductors;
- 73.43.-f;
- 72.20.My;
- 68.55.aj;
- 81.15.Gh;
- 73.61.Ng;
- Quantum Hall effects;
- Galvanomagnetic and other magnetotransport effects;
- Insulators;
- Chemical vapor deposition;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 2 new references added